2SD1007Q Transistor Datasheet & Specifications

NPN SOT-89 General Purpose Shikues
VCEO
120V
Ic Max
700mA
Pd Max
2W
hFE Gain
200

Quick Reference

The 2SD1007Q is a NPN bipolar transistor in a SOT-89 package by Shikues. This datasheet provides complete specifications including 120V breakdown voltage and 700mA continuous collector current. Download the 2SD1007Q datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerShikuesOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO120VBreakdown voltage
Ic700mACollector current
Pd2WPower dissipation
DC Current Gain200hFE / Beta
Frequency90MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SC2383 NPN SOT-89 160V 1A 500mW
ZXTN4004ZTA NPN SOT-89 150V 1A 2W
2SC2383-JSM NPN SOT-89 160V 1A 500mW
2SD2211T100R NPN SOT-89 160V 1.5A 2W
2SC2383 NPN SOT-89 160V 1A 500mW
2SD669AG-C-AB3-R NPN SOT-89 160V 1.5A 500mW
2SC4373-Y NPN SOT-89 120V 800mA 500mW
FCX605TA NPN SOT-89 120V 1A 1W
2SC2383Y NPN SOT-89 160V 1A 500mW
FCX495TA NPN SOT-89 150V 1A 1W