2SC5876T106Q Transistor Datasheet & Specifications
NPN
SOT-323-3
General Purpose
ROHM
VCEO
60V
Ic Max
500mA
Pd Max
200mW
hFE Gain
120
Quick Reference
The 2SC5876T106Q is a NPN bipolar transistor in a SOT-323-3 package by ROHM. This datasheet provides complete specifications including 60V breakdown voltage and 500mA continuous collector current. Download the 2SC5876T106Q datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SOT-323-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| PMSTA05,115 | NPN | SOT-323-3 | 60V | 500mA | 200mW |
| PBSS4160U,115 | NPN | SOT-323-3 | 60V | 750mA | 415mW |