PBSS4160U,115 Transistor Datasheet & Specifications
NPN
SOT-323-3
General Purpose
Nexperia
VCEO
60V
Ic Max
750mA
Pd Max
415mW
hFE Gain
200
Quick Reference
The PBSS4160U,115 is a NPN bipolar transistor in a SOT-323-3 package by Nexperia. This datasheet provides complete specifications including 60V breakdown voltage and 750mA continuous collector current. Download the PBSS4160U,115 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-323-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 750mA | Collector current |
| Pd | 415mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 220MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |