2SC5198-O(S1,E,S) Transistor Datasheet & Specifications
NPN
TO-3P-3
High Power
TOSHIBA
VCEO
140V
Ic Max
10A
Pd Max
100W
hFE Gain
55
Quick Reference
The 2SC5198-O(S1,E,S) is a NPN bipolar transistor in a TO-3P-3 package by TOSHIBA. This datasheet provides complete specifications including 140V breakdown voltage and 10A continuous collector current. Download the 2SC5198-O(S1,E,S) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TO-3P-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 140V | Breakdown voltage |
| Ic | 10A | Collector current |
| Pd | 100W | Power dissipation |
| DC Current Gain | 55 | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | 2V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 5uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| TTC5200(Q) | NPN | TO-3P-3 | 230V | 15A | 150W |