TTC5200(Q) Transistor Datasheet & Specifications
NPN
TO-3P-3
High Power
TOSHIBA
VCEO
230V
Ic Max
15A
Pd Max
150W
hFE Gain
80
Quick Reference
The TTC5200(Q) is a NPN bipolar transistor in a TO-3P-3 package by TOSHIBA. This datasheet provides complete specifications including 230V breakdown voltage and 15A continuous collector current. Download the TTC5200(Q) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TO-3P-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 230V | Breakdown voltage |
| Ic | 15A | Collector current |
| Pd | 150W | Power dissipation |
| DC Current Gain | 80 | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |