2SC3356G-B-AE2-R Transistor Datasheet & Specifications

NPN SOT-23-3 General Purpose UTC
VCEO
12V
Ic Max
100mA
Pd Max
200mW
hFE Gain
160

Quick Reference

The 2SC3356G-B-AE2-R is a NPN bipolar transistor in a SOT-23-3 package by UTC. This datasheet provides complete specifications including 12V breakdown voltage and 100mA continuous collector current. Download the 2SC3356G-B-AE2-R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-23-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO12VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain160hFE / Beta
Frequency7GHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo3VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT4401 NPN SOT-23-3 40V 600mA 300mW
BC817-40 NPN SOT-23-3 45V 500mA 300mW
HT8050ARTZ NPN SOT-23-3 25V 1.5A 300mW
BC847AQ-7-F NPN SOT-23-3 45V 100mA 310mW
MMBT4124LT1G NPN SOT-23-3 25V 200mA 225mW
BCV71 NPN SOT-23-3 60V 500mA 350mW
STR1550 NPN SOT-23-3 500V 500mA 500mW
FMMTL619TA NPN SOT-23-3 50V 1.25A 500mW
BCV47 NPN SOT-23-3 60V 500mA 300mW