MMBT4124LT1G Transistor Datasheet & Specifications

NPN SOT-23-3 General Purpose onsemi
VCEO
25V
Ic Max
200mA
Pd Max
225mW
hFE Gain
120

Quick Reference

The MMBT4124LT1G is a NPN bipolar transistor in a SOT-23-3 package by onsemi. This datasheet provides complete specifications including 25V breakdown voltage and 200mA continuous collector current. Download the MMBT4124LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic200mACollector current
Pd225mWPower dissipation
DC Current Gain120hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT4401 NPN SOT-23-3 40V 600mA 300mW
BC817-40 NPN SOT-23-3 45V 500mA 300mW
HT8050ARTZ NPN SOT-23-3 25V 1.5A 300mW
BCV71 NPN SOT-23-3 60V 500mA 350mW
STR1550 NPN SOT-23-3 500V 500mA 500mW
FMMTL619TA NPN SOT-23-3 50V 1.25A 500mW
BCV47 NPN SOT-23-3 60V 500mA 300mW