2SC3356-R25 Transistor Datasheet & Specifications
NPN
SOT-23-3L
General Purpose
JSMSEMI
VCEO
12V
Ic Max
100mA
Pd Max
200mW
hFE Gain
120
Quick Reference
The 2SC3356-R25 is a NPN bipolar transistor in a SOT-23-3L package by JSMSEMI. This datasheet provides complete specifications including 12V breakdown voltage and 100mA continuous collector current. Download the 2SC3356-R25 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | SOT-23-3L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 12V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 7GHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | 3V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| D965 | NPN | SOT-23-3L | 22V | 5A | 350mW |