D965 Transistor Datasheet & Specifications
NPN
SOT-23-3L
High Power
HT(Shenzhen Jinyu Semicon)
VCEO
22V
Ic Max
5A
Pd Max
350mW
hFE Gain
600
Quick Reference
The D965 is a NPN bipolar transistor in a SOT-23-3L package by HT(Shenzhen Jinyu Semicon). This datasheet provides complete specifications including 22V breakdown voltage and 5A continuous collector current. Download the D965 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | SOT-23-3L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 22V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 350mW | Power dissipation |
| DC Current Gain | 600 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |