2SB863 Transistor Datasheet & Specifications
PNP
TO-3PI
High Power
SPTECH
VCEO
140V
Ic Max
10A
Pd Max
100W
hFE Gain
160
Quick Reference
The 2SB863 is a PNP bipolar transistor in a TO-3PI package by SPTECH. This datasheet provides complete specifications including 140V breakdown voltage and 10A continuous collector current. Download the 2SB863 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3PI | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 140V | Breakdown voltage |
| Ic | 10A | Collector current |
| Pd | 100W | Power dissipation |
| DC Current Gain | 160 | hFE / Beta |
| Frequency | 15MHz | Transition speed (fT) |
| VCEsat | 2V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 5uA | Leakage (ICBO) |
| Temp | - | Operating temp |