2SA1962 Transistor Datasheet & Specifications
PNP
TO-3PI
High Power
SPTECH
VCEO
230V
Ic Max
15A
Pd Max
130W
hFE Gain
160
Quick Reference
The 2SA1962 is a PNP bipolar transistor in a TO-3PI package by SPTECH. This datasheet provides complete specifications including 230V breakdown voltage and 15A continuous collector current. Download the 2SA1962 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3PI | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 230V | Breakdown voltage |
| Ic | 15A | Collector current |
| Pd | 130W | Power dissipation |
| DC Current Gain | 160 | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | 3V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 5uA | Leakage (ICBO) |
| Temp | - | Operating temp |