2SB1116L-G-T92-B Transistor Datasheet & Specifications

PNP TO-92 General Purpose UTC
VCEO
50V
Ic Max
1A
Pd Max
750mW
hFE Gain
600

Quick Reference

The 2SB1116L-G-T92-B is a PNP bipolar transistor in a TO-92 package by UTC. This datasheet provides complete specifications including 50V breakdown voltage and 1A continuous collector current. Download the 2SB1116L-G-T92-B datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageTO-92Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic1ACollector current
Pd750mWPower dissipation
DC Current Gain600hFE / Beta
Frequency120MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-20โ„ƒ~+85โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZTX551 PNP TO-92 60V 1A 1W
2SB1116AG-G-T92-B PNP TO-92 60V 1A 750mW
ZTX792ASTZ PNP TO-92 70V 2A 1W
ZTX957 PNP TO-92 300V 1A 1.2W
BC640 PNP TO-92 80V 1A 830mW
BC640 PNP TO-92 80V 1A 830mW
ZTX753 PNP TO-92 100V 2A 1W
ZTX705 PNP TO-92 120V 1A 1W