2SB1116AG-G-T92-B Transistor Datasheet & Specifications
PNP
TO-92
General Purpose
UTC
VCEO
60V
Ic Max
1A
Pd Max
750mW
hFE Gain
200
Quick Reference
The 2SB1116AG-G-T92-B is a PNP bipolar transistor in a TO-92 package by UTC. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the 2SB1116AG-G-T92-B datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 750mW | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -20℃~+85℃ | Operating temp |