2SA812 Transistor Datasheet & Specifications

PNP SOT-23 General Purpose FOSAN
VCEO
50V
Ic Max
100mA
Pd Max
300mW
hFE Gain
600

Quick Reference

The 2SA812 is a PNP bipolar transistor in a SOT-23 package by FOSAN. This datasheet provides complete specifications including 50V breakdown voltage and 100mA continuous collector current. Download the 2SA812 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFOSANOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic100mACollector current
Pd300mWPower dissipation
DC Current Gain600hFE / Beta
Frequency180MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-F PNP SOT-23 60V 600mA 350mW
FMMT560TA PNP SOT-23 500V 150mA 500mW
BC856ALT1G PNP SOT-23 65V 100mA 225mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
2SA812 PNP SOT-23 50V 100mA 200mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC856BLT1G PNP SOT-23 65V 100mA 225mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW
PBSS5160T,215 PNP SOT-23 60V 1A 400mW