2SA2040-TL-E Transistor Datasheet & Specifications
PNP
TO-252-3
High Power
onsemi
VCEO
50V
Ic Max
8A
Pd Max
15W
hFE Gain
200
Quick Reference
The 2SA2040-TL-E is a PNP bipolar transistor in a TO-252-3 package by onsemi. This datasheet provides complete specifications including 50V breakdown voltage and 8A continuous collector current. Download the 2SA2040-TL-E datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 15W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 330MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SA2169-TL-E | PNP | TO-252-3 | 50V | 10A | 950mW |