2SA2169-TL-E Transistor Datasheet & Specifications

PNP TO-252-3 General Purpose onsemi
VCEO
50V
Ic Max
10A
Pd Max
950mW
hFE Gain
700
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Quick Reference

The 2SA2169-TL-E is a PNP bipolar transistor in a TO-252-3 package by onsemi. This datasheet provides complete specifications including 50V breakdown voltage and 10A continuous collector current. Download the 2SA2169-TL-E datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic10ACollector current
Pd950mWPower dissipation
DC Current Gain700hFE / Beta
Frequency200MHzTransition speed (fT)
VCEsat580mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all TO-252-3 PNP Transistors ›