2SA2018 Transistor Datasheet & Specifications

PNP SOT-523 General Purpose JSCJ
VCEO
12V
Ic Max
500mA
Pd Max
150mW
hFE Gain
270

Quick Reference

The 2SA2018 is a PNP bipolar transistor in a SOT-523 package by JSCJ. This datasheet provides complete specifications including 12V breakdown voltage and 500mA continuous collector current. Download the 2SA2018 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-523Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO12VBreakdown voltage
Ic500mACollector current
Pd150mWPower dissipation
DC Current Gain270hFE / Beta
Frequency260MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT2907AT-7-F PNP SOT-523 60V 600mA 150mW
S8550T PNP SOT-523 25V 500mA 300mW
MMBT5401T PNP SOT-523 150V 600mA 200mW
MMBT5401T PNP SOT-523 150V 600mA 200mW
CMUT2907A TR PBFREE PNP SOT-523 60V 1.2A 250mW
MMBT5401T PNP SOT-523 150V 600mA 200mW
S8550 PNP SOT-523 25V 500mA 200mW
S8550T PNP SOT-523 25V 500mA 300mW
S8550 PNP SOT-523 25V 500mA 300mW
MMBT2907AT PNP SOT-523 60V 600mA 150mW