2SA1952TLQ Transistor Datasheet & Specifications
PNP
TO-252-2(DPAK)
High Power
ROHM
VCEO
60V
Ic Max
5A
Pd Max
10W
hFE Gain
270
Quick Reference
The 2SA1952TLQ is a PNP bipolar transistor in a TO-252-2(DPAK) package by ROHM. This datasheet provides complete specifications including 60V breakdown voltage and 5A continuous collector current. Download the 2SA1952TLQ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | TO-252-2(DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 10W | Power dissipation |
| DC Current Gain | 270 | hFE / Beta |
| Frequency | 80MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD127T4 | PNP | TO-252-2(DPAK) | 100V | 8A | 20W |