2N4922G Transistor Datasheet & Specifications

NPN TO-225-3 High Power onsemi
VCEO
60V
Ic Max
1A
Pd Max
30W
hFE Gain
10
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Quick Reference

The 2N4922G is a NPN bipolar transistor in a TO-225-3 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the 2N4922G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic1ACollector current
Pd30WPower dissipation
DC Current Gain10hFE / Beta
Frequency3MHzTransition speed (fT)
VCEsat600mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100uALeakage (ICBO)
Temp-65℃~+150℃Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BD139G NPN TO-225-3 80V 1.5A 12.5W
BD681G NPN TO-225-3 100V 4A 40W
MJE243G NPN TO-225-3 100V 4A 15W
MJE182G NPN TO-225-3 100V 3A 12.5W
View all TO-225-3 NPN Transistors ›