BD139G Transistor Datasheet & Specifications

NPN TO-225-3 High Power onsemi
VCEO
80V
Ic Max
1.5A
Pd Max
12.5W
hFE Gain
25
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Quick Reference

The BD139G is a NPN bipolar transistor in a TO-225-3 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 1.5A continuous collector current. Download the BD139G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1.5ACollector current
Pd12.5WPower dissipation
DC Current Gain25hFE / Beta
Frequency-Transition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BD681G NPN TO-225-3 100V 4A 40W
MJE243G NPN TO-225-3 100V 4A 15W
MJE182G NPN TO-225-3 100V 3A 12.5W
View all TO-225-3 NPN Transistors ›