2DD2679-13 Transistor Datasheet & Specifications

NPN SOT-89-3L General Purpose DIODES
VCEO
30V
Ic Max
2A
Pd Max
900mW
hFE Gain
270

Quick Reference

The 2DD2679-13 is a NPN bipolar transistor in a SOT-89-3L package by DIODES. This datasheet provides complete specifications including 30V breakdown voltage and 2A continuous collector current. Download the 2DD2679-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89-3LPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic2ACollector current
Pd900mWPower dissipation
DC Current Gain270hFE / Beta
Frequency240MHzTransition speed (fT)
VCEsat80mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
D882H(RANGE:160-320) NPN SOT-89-3L 70V 3A 500mW
D882(RANGE:200-400) NPN SOT-89-3L 30V 3A 500mW
2SC2873(RANGE:120-240) NPN SOT-89-3L 50V 2A 500mW
2SD2391(RANGE:120-270) NPN SOT-89-3L 60V 2A 500mW
2SD2391 NPN SOT-89-3L 60V 3A 2W
DXT651 NPN SOT-89-3L 60V 3A 1W
D882(RANGE:160-320) NPN SOT-89-3L 30V 3A 500mW
D882 NPN SOT-89-3L 30V 3A 500mW
D882 NPN SOT-89-3L 30V 3A 500mW
D882Y-2AF NPN SOT-89-3L 30V 3A 500mW