D882Y-2AF Transistor Datasheet & Specifications

NPN SOT-89-3L General Purpose FOSAN
VCEO
30V
Ic Max
3A
Pd Max
500mW
hFE Gain
400

Quick Reference

The D882Y-2AF is a NPN bipolar transistor in a SOT-89-3L package by FOSAN. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the D882Y-2AF datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFOSANOriginal Manufacturer
PackageSOT-89-3LPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic3ACollector current
Pd500mWPower dissipation
DC Current Gain400hFE / Beta
Frequency60MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
D882H(RANGE:160-320) NPN SOT-89-3L 70V 3A 500mW
D882(RANGE:200-400) NPN SOT-89-3L 30V 3A 500mW
2SD2391 NPN SOT-89-3L 60V 3A 2W
DXT651 NPN SOT-89-3L 60V 3A 1W
D882(RANGE:160-320) NPN SOT-89-3L 30V 3A 500mW
D882 NPN SOT-89-3L 30V 3A 500mW
D882 NPN SOT-89-3L 30V 3A 500mW