2DB1184Q-13 Transistor Datasheet & Specifications
PNP
TO-252(DPAK)
General Purpose
DIODES
VCEO
50V
Ic Max
3A
Pd Max
1.2W
hFE Gain
120
Quick Reference
The 2DB1184Q-13 is a PNP bipolar transistor in a TO-252(DPAK) package by DIODES. This datasheet provides complete specifications including 50V breakdown voltage and 3A continuous collector current. Download the 2DB1184Q-13 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-252(DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1.2W | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 110MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD2955T4G | PNP | TO-252(DPAK) | 60V | 10A | 20W |
| MJD45H11T4G | PNP | TO-252(DPAK) | 80V | 8A | 20W |
| NJVMJD45H11RLG | PNP | TO-252(DPAK) | 80V | 8A | 20W |
| MJD127T4G | PNP | TO-252(DPAK) | 100V | 8A | 1.75W |
| 2SAR573D3TL1 | PNP | TO-252(DPAK) | 50V | 3A | 10W |
| MJD45H11 | PNP | TO-252(DPAK) | 80V | 8A | 20W |
| NJVMJD127T4G | PNP | TO-252(DPAK) | 100V | 8A | 20W |
| MJD45H11G | PNP | TO-252(DPAK) | 80V | 8A | 20W |