2DB1184Q-13 Transistor Datasheet & Specifications

PNP TO-252(DPAK) General Purpose DIODES
VCEO
50V
Ic Max
3A
Pd Max
1.2W
hFE Gain
120

Quick Reference

The 2DB1184Q-13 is a PNP bipolar transistor in a TO-252(DPAK) package by DIODES. This datasheet provides complete specifications including 50V breakdown voltage and 3A continuous collector current. Download the 2DB1184Q-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic3ACollector current
Pd1.2WPower dissipation
DC Current Gain120hFE / Beta
Frequency110MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJD2955T4G PNP TO-252(DPAK) 60V 10A 20W
MJD45H11T4G PNP TO-252(DPAK) 80V 8A 20W
NJVMJD45H11RLG PNP TO-252(DPAK) 80V 8A 20W
MJD127T4G PNP TO-252(DPAK) 100V 8A 1.75W
2SAR573D3TL1 PNP TO-252(DPAK) 50V 3A 10W
MJD45H11 PNP TO-252(DPAK) 80V 8A 20W
NJVMJD127T4G PNP TO-252(DPAK) 100V 8A 20W
MJD45H11G PNP TO-252(DPAK) 80V 8A 20W