NJVMJD127T4G Transistor Datasheet & Specifications
PNP
TO-252(DPAK)
High Power
onsemi
VCEO
100V
Ic Max
8A
Pd Max
20W
hFE Gain
1000
Quick Reference
The NJVMJD127T4G is a PNP bipolar transistor in a TO-252(DPAK) package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the NJVMJD127T4G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-252(DPAK) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 20W | Power dissipation |
| DC Current Gain | 1000 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 4V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -65℃~+150℃@(Tj) | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD127T4G | PNP | TO-252(DPAK) | 100V | 8A | 1.75W |