13003 Transistor Datasheet & Specifications
NPN
TO-252-2L
General Purpose
HXY MOSFET
VCEO
480V
Ic Max
1.5A
Pd Max
1.25W
hFE Gain
40
Quick Reference
The 13003 is a NPN bipolar transistor in a TO-252-2L package by HXY MOSFET. This datasheet provides complete specifications including 480V breakdown voltage and 1.5A continuous collector current. Download the 13003 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 480V | Breakdown voltage |
| Ic | 1.5A | Collector current |
| Pd | 1.25W | Power dissipation |
| DC Current Gain | 40 | hFE / Beta |
| Frequency | 5MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 9V | Emitter-Base voltage |
| Cutoff Current | 500uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| STD13003T4-HXY | NPN | TO-252-2L | 500V | 1.5A | 1.25W |