STD13003T4-HXY Transistor Datasheet & Specifications

NPN TO-252-2L General Purpose HXY MOSFET
VCEO
500V
Ic Max
1.5A
Pd Max
1.25W
hFE Gain
-
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Quick Reference

The STD13003T4-HXY is a NPN bipolar transistor in a TO-252-2L package by HXY MOSFET. This datasheet provides complete specifications including 500V breakdown voltage and 1.5A continuous collector current. Download the STD13003T4-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-252-2LPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO500VBreakdown voltage
Ic1.5ACollector current
Pd1.25WPower dissipation
DC Current Gain-hFE / Beta
Frequency5MHzTransition speed (fT)
VCEsat500mV@0.5A,200mASaturation voltage
Vebo9VEmitter-Base voltage
Cutoff Current500uALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all TO-252-2L NPN Transistors ›