ZXTP2012GTA Datasheet & Equivalents
PNP
SOT-223
High Power
DIODES
VCEO
60V
Ic Max
5.5A
Pd Max
3W
hFE Gain
45
Quick Reference
The ZXTP2012GTA is a PNP bipolar junction transistor in a SOT-223 package, manufactured by DIODES. It supports a breakdown voltage of 60V and continuous collector current of 5.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 60V | Max breakdown voltage |
| Collector Current (Ic) | 5.5A | Max current handling |
| Power Dissipation (Pd) | 3W | Max thermal limit |
| DC Current Gain (hFE) | 45 | Base signal amplification ratio |
| Transition Frequency (fT) | 120MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 195mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 500nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ZX5T951GQTC | PNP | SOT-223 | 60V | 5.5A | 100 | 3W | DIODES 📄 PDF |
| ZX5T951GTA | PNP | SOT-223 | 60V | 5.5A | 100 | 3W | DIODES 📄 PDF |
| ZX5T951GTC | PNP | SOT-223 | 60V | 5.5A | 100 | 3W | DIODES 📄 PDF |
| LBTP660Z4TZHG | PNP | SOT-223 | 60V | 6A | 70 | 833mW | LRC 📄 PDF |
| DSS60600MZ4-13 | PNP | SOT-223 | 60V | 6A | 100 | 2W | DIODES 📄 PDF |
| ZX5T1951GTA | PNP | SOT-223 | 60V | 6A | 100 | 3W | DIODES 📄 PDF |
| NSS60600MZ4T1G | PNP | SOT-223 | 60V | 6A | 360 | 2W | onsemi 📄 PDF |
| NSV60600MZ4T3G | PNP | SOT-223 | 60V | 6A | 360 | 2W | onsemi 📄 PDF |