ZXTNS618MCTA Datasheet & Equivalents
NPN
DFN-8 (2x3)
High Power
DIODES
VCEO
20V
Ic Max
4.5A
Pd Max
19.6W
hFE Gain
450
Quick Reference
The ZXTNS618MCTA is a NPN bipolar junction transistor in a DFN-8 (2x3) package, manufactured by DIODES. It supports a breakdown voltage of 20V and continuous collector current of 4.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | DFN-8 (2x3) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 20V | Max breakdown voltage |
| Collector Current (Ic) | 4.5A | Max current handling |
| Power Dissipation (Pd) | 19.6W | Max thermal limit |
| DC Current Gain (hFE) | 450 | Base signal amplification ratio |
| Transition Frequency (fT) | 140MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 150mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||