ZXTN25012EZTA Datasheet & Equivalents
NPN
SOT-89
High Power
DIODES
VCEO
12V
Ic Max
6.5A
Pd Max
2.4W
hFE Gain
185
Quick Reference
The ZXTN25012EZTA is a NPN bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 12V and continuous collector current of 6.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 12V | Max breakdown voltage |
| Collector Current (Ic) | 6.5A | Max current handling |
| Power Dissipation (Pd) | 2.4W | Max thermal limit |
| DC Current Gain (hFE) | 185 | Base signal amplification ratio |
| Transition Frequency (fT) | 260MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ZXTN19020DZTA | NPN | SOT-89 | 20V | 7.5A | 300 | 2.4W | DIODES 📄 PDF |