ZXTN25012EFHTA Datasheet & Equivalents
NPN
SOT-23
General Purpose
DIODES
VCEO
12V
Ic Max
6A
Pd Max
1.25W
hFE Gain
500
Quick Reference
The ZXTN25012EFHTA is a NPN bipolar junction transistor in a SOT-23 package, manufactured by DIODES. It supports a breakdown voltage of 12V and continuous collector current of 6A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 12V | Max breakdown voltage |
| Collector Current (Ic) | 6A | Max current handling |
| Power Dissipation (Pd) | 1.25W | Max thermal limit |
| DC Current Gain (hFE) | 500 | Base signal amplification ratio |
| Transition Frequency (fT) | 260MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ZXTN23015CFHTA | NPN | SOT-23 | 15V | 9A | 160 | 1.25W | DIODES 📄 PDF |