ZXTN2010GTA Datasheet & Equivalents
NPN
SOT-223
High Power
DIODES
VCEO
60V
Ic Max
6A
Pd Max
3W
hFE Gain
100
Quick Reference
The ZXTN2010GTA is a NPN bipolar junction transistor in a SOT-223 package, manufactured by DIODES. It supports a breakdown voltage of 60V and continuous collector current of 6A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 60V | Max breakdown voltage |
| Collector Current (Ic) | 6A | Max current handling |
| Power Dissipation (Pd) | 3W | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 130MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| FZT851TA | NPN | SOT-223 | 60V | 6A | 100 | 3W | DIODES 📄 PDF |
| NSS60601MZ4T1G | NPN | SOT-223 | 60V | 6A | 150 | 2W | onsemi 📄 PDF |
| ZX5T851GTA | NPN | SOT-223 | 60V | 6A | 40 | 1.6W | DIODES 📄 PDF |
| ZXTN19060CGTA | NPN | SOT-223 | 60V | 7A | 160 | 3W | DIODES 📄 PDF |
| FZT853TA | NPN | SOT-223 | 100V | 6A | 100 | 3W | DIODES 📄 PDF |
| ZX5T853GTA | NPN | SOT-223 | 100V | 6A | 30 | 3W | DIODES 📄 PDF |