ZXMN2F30FHQTA MOSFET Datasheet & Specifications
N-Channel
SOT-23-3
Logic-Level
DIODES
Vds Max
20V
Id Max
4.9A
Rds(on)
45mΩ@4.5V;65mΩ@2.5V
Vgs(th)
1.5V
Quick Reference
The ZXMN2F30FHQTA is an N-Channel MOSFET in a SOT-23-3 package, manufactured by DIODES. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.9A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-23-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.9A | Max current handling |
| Power Dissipation (Pd) | 1.4W | Max thermal limit |
| On-Resistance (Rds(on)) | 45mΩ@4.5V;65mΩ@2.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 4.8nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 452pF | Internal gate capacitance |
| Output Capacitance (Coss) | 102pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |