ZXMC3A16DN8QTA MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SO-8
Logic-Level
DIODES
Vds Max
30V
Id Max
6.4A
Rds(on)
35mΩ@10V;48mΩ@10V
Vgs(th)
1V
Quick Reference
The ZXMC3A16DN8QTA is a Dual N/P-Channel in a SO-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 6.4A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6.4A | Max current handling |
| Power Dissipation (Pd) | 2.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 35mΩ@10V;48mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 24.9nC@10V | Switching energy |
| Input Capacitance (Ciss) | 970pF | Internal gate capacitance |
| Output Capacitance (Coss) | 166pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMC3021LSD-13 | Dual N/P-Channel | SO-8 | 30V;30V | 8.5A;7A | 14mΩ@10V 30mΩ@10V |
1.45V;1.7V | DIODES 📄 PDF |
| IRF7319TRPBF | Dual N/P-Channel | SO-8 | 30V | 6.5A | 58mΩ@10V | 1V | Infineon 📄 PDF |
| DMC4040SSDQ-13 | Dual N/P-Channel | SO-8 | 40V | 7.5A | 25mΩ@10V 25mΩ@-10V |
1.3V | DIODES 📄 PDF |