ZXMC10A816N8TC MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SO-8
Logic-Level
DIODES
Vds Max
100V;100V
Id Max
2.1A;2.2A
Rds(on)
230mΩ@10V;235mΩ@10V
Vgs(th)
1.7V;3V
Quick Reference
The ZXMC10A816N8TC is a Dual N/P-Channel in a SO-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 100V;100V and a continuous drain current of 2.1A;2.2A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 100V;100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 2.1A;2.2A | Max current handling |
| Power Dissipation (Pd) | 2.4W;2.6W | Max thermal limit |
| On-Resistance (Rds(on)) | 230mΩ@10V;235mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.7V;3V | Voltage required to turn on |
| Gate Charge (Qg) | 9.2nC@10V;16.5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 497pF;717pF | Internal gate capacitance |
| Output Capacitance (Coss) | 29pF;55pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||