ZVP2110GTA MOSFET Datasheet & Specifications

P-Channel SOT-223 Standard Power DIODES
Vds Max
100V
Id Max
310mA
Rds(on)
8Ω@10V
Vgs(th)
3.5V

Quick Reference

The ZVP2110GTA is an P-Channel MOSFET in a SOT-223 package, manufactured by DIODES. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 310mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)310mAMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))8Ω@10VResistance when turned fully on
Gate Threshold (Vgs(th))3.5VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)100pFInternal gate capacitance
Output Capacitance (Coss)35pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMP10H400SE-13 P-Channel SOT-223 100V 2.3A 203mΩ@10V
241mΩ@4.5V
2.2V
DIODES 📄 PDF
ZXMP10A17GTA P-Channel SOT-223 100V 2.4A 450mΩ@6V 4V
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BSP322PH6327 P-Channel SOT-223 100V 1A 1Ω@4.5V 1V
Infineon 📄 PDF
HSL3P20 P-Channel SOT-223 200V 3A 2.4Ω@10V 4V
HUASHUO 📄 PDF