ZTX692B Datasheet & Equivalents
NPN
TO-92
General Purpose
DIODES
VCEO
70V
Ic Max
1A
Pd Max
1.5W
hFE Gain
400
Quick Reference
The ZTX692B is a NPN bipolar junction transistor in a TO-92 package, manufactured by DIODES. It supports a breakdown voltage of 70V and continuous collector current of 1A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 70V | Max breakdown voltage |
| Collector Current (Ic) | 1A | Max current handling |
| Power Dissipation (Pd) | 1.5W | Max thermal limit |
| DC Current Gain (hFE) | 400 | Base signal amplification ratio |
| Transition Frequency (fT) | 150MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+200℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BC639(RANGE:100-250) | NPN | TO-92 | 80V | 1A | 100 | 830mW | JSCJ 📄 PDF |
| BC63916-D74Z | NPN | TO-92 | 80V | 1A | 100 | 830mW | onsemi 📄 PDF |
| 2SD667A-C | NPN | TO-92 | 100V | 1A | 100 | 900mW | BLUE ROCKET 📄 PDF |
| ZTX605 | NPN | TO-92 | 120V | 1A | 2000 | 1W | DIODES 📄 PDF |
| 2SD1857L-Q-T92-B | NPN | TO-92 | 120V | 2A | 120 | 625mW | UTC 📄 PDF |
| ZTX455 | NPN | TO-92 | 140V | 1A | 100 | 1W | DIODES 📄 PDF |
| ZTX455STZ | NPN | TO-92 | 140V | 1A | 100 | 1W | DIODES 📄 PDF |
| 2SC2383-Y | NPN | TO-92 | 160V | 1A | 320 | 700mW | YFW 📄 PDF |
| KSC2383OTA | NPN | TO-92 | 160V | 1A | 60 | 900mW | onsemi 📄 PDF |