ZTX649STZ Datasheet & Equivalents
NPN
TO-92
General Purpose
DIODES
VCEO
25V
Ic Max
2A
Pd Max
1W
hFE Gain
100
Quick Reference
The ZTX649STZ is a NPN bipolar junction transistor in a TO-92 package, manufactured by DIODES. It supports a breakdown voltage of 25V and continuous collector current of 2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 25V | Max breakdown voltage |
| Collector Current (Ic) | 2A | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| DC Current Gain (hFE) | 100 | Base signal amplification ratio |
| Transition Frequency (fT) | 240MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+200℃ | Safe junction temperature range |