YJQ55P02A MOSFET Datasheet & Specifications
P-Channel
DFN3333-8L
Logic-Level
YANGJIE
Vds Max
20V
Id Max
55A
Rds(on)
6.5mΩ@4.5V
Vgs(th)
400mV
Quick Reference
The YJQ55P02A is an P-Channel MOSFET in a DFN3333-8L package, manufactured by YANGJIE. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 55A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | DFN3333-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 55A | Max current handling |
| Power Dissipation (Pd) | 3.2W | Max thermal limit |
| On-Resistance (Rds(on)) | 6.5mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 400mV | Voltage required to turn on |
| Gate Charge (Qg) | 12.7nC@10V | Switching energy |
| Input Capacitance (Ciss) | 6.358nF | Internal gate capacitance |
| Output Capacitance (Coss) | 690pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||