YJL3407CQ MOSFET Datasheet & Specifications
P-Channel
SOT-23(TO-236)
Logic-Level
YANGJIE
Vds Max
30V
Id Max
4.1A
Rds(on)
47mΩ@10V
Vgs(th)
2.4V
Quick Reference
The YJL3407CQ is an P-Channel MOSFET in a SOT-23(TO-236) package, manufactured by YANGJIE. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 4.1A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | SOT-23(TO-236) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.1A | Max current handling |
| Power Dissipation (Pd) | 1.2W | Max thermal limit |
| On-Resistance (Rds(on)) | 47mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.4V | Voltage required to turn on |
| Gate Charge (Qg) | 9nC | Switching energy |
| Input Capacitance (Ciss) | 471pF | Internal gate capacitance |
| Output Capacitance (Coss) | 84pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| VB2355 | P-Channel | SOT-23(TO-236) | 30V | 5.6A | 46mΩ@10V | 2V | VBsemi Elec 📄 PDF |
| SI2371EDS-T1-GE3-VB | P-Channel | SOT-23(TO-236) | 30V | 5.6A | 54mΩ@4.5V | 2V | VBsemi Elec 📄 PDF |