YJG60G10BQ MOSFET Datasheet & Specifications
N-Channel
PDFN-8L(5.9x5.2)
Logic-Level
YANGJIE
Vds Max
100V
Id Max
60A
Rds(on)
15mΩ@4.5V
Vgs(th)
2.8V
Quick Reference
The YJG60G10BQ is an N-Channel MOSFET in a PDFN-8L(5.9x5.2) package, manufactured by YANGJIE. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | PDFN-8L(5.9x5.2) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 15mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.8V | Voltage required to turn on |
| Gate Charge (Qg) | 36nC@13V | Switching energy |
| Input Capacitance (Ciss) | 2.5nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||