YJG40G10AQ MOSFET Datasheet & Specifications
N-Channel
PDFN5060-8L
Logic-Level
YANGJIE
Vds Max
100V
Id Max
40A
Rds(on)
15mΩ@10V
Vgs(th)
1.8V
Quick Reference
The YJG40G10AQ is an N-Channel MOSFET in a PDFN5060-8L package, manufactured by YANGJIE. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 40A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | PDFN5060-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 40A | Max current handling |
| Power Dissipation (Pd) | 70W | Max thermal limit |
| On-Resistance (Rds(on)) | 15mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.8V | Voltage required to turn on |
| Gate Charge (Qg) | 17nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.15nF | Internal gate capacitance |
| Output Capacitance (Coss) | 370pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |