YJG2D7G06A MOSFET Datasheet & Specifications

N-Channel PDFN-8L(5x6) Logic-Level YANGJIE
Vds Max
60V
Id Max
120A
Rds(on)
2.7mΩ@10V
Vgs(th)
2.3V

Quick Reference

The YJG2D7G06A is an N-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by YANGJIE. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 120A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerYANGJIEOriginal Manufacturer
PackagePDFN-8L(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)120AMax current handling
Power Dissipation (Pd)78WMax thermal limit
On-Resistance (Rds(on))2.7mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.3VVoltage required to turn on
Gate Charge (Qg)49nC@10VSwitching energy
Input Capacitance (Ciss)3.5nFInternal gate capacitance
Output Capacitance (Coss)1.345nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
XRS200N06HF N-Channel PDFN-8L(5x6) 60V 200A 1.1mΩ@10V 2.4V
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SP60N02BGNK N-Channel PDFN-8L(5x6) 60V 120A 2.3mΩ@10V
2.7mΩ@4.5V
1.7V
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XRS125N06LF N-Channel PDFN-8L(5x6) 60V 125A 2.4mΩ@10V 2.2V
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BSC030N08NS5(ES) N-Channel PDFN-8L(5x6) 100V 138A 3mΩ@10V 2.7V
ElecSuper 📄 PDF