XRS60N04D MOSFET Datasheet & Specifications

N-Channel PDFN-8L(3.3x3.3) Logic-Level XNRUSEMI
Vds Max
40V
Id Max
60A
Rds(on)
6.9mΩ@10V
Vgs(th)
1.7V

Quick Reference

The XRS60N04D is an N-Channel MOSFET in a PDFN-8L(3.3x3.3) package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 60A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerXNRUSEMIOriginal Manufacturer
PackagePDFN-8L(3.3x3.3)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)39WMax thermal limit
On-Resistance (Rds(on))6.9mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.7VVoltage required to turn on
Gate Charge (Qg)5.8nC@20VSwitching energy
Input Capacitance (Ciss)690pFInternal gate capacitance
Output Capacitance (Coss)193pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
XRS120N04D N-Channel PDFN-8L(3.3x3.3) 40V 120A 2.1mΩ@10V 1.7V
XNRUSEMI 📄 PDF
XRS80N04D N-Channel PDFN-8L(3.3x3.3) 40V 80A 3.4mΩ@10V 1.55V
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XRS70N04D N-Channel PDFN-8L(3.3x3.3) 40V 70A 4.6mΩ@10V 1.7V
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XRS65N04D N-Channel PDFN-8L(3.3x3.3) 40V 65A 5.8mΩ@10V 1.7V
XNRUSEMI 📄 PDF
XRS80N06LD N-Channel PDFN-8L(3.3x3.3) 60V 80A 4.2mΩ@10V 1.8V
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