XRS30N10D MOSFET Datasheet & Specifications
N-Channel
PDFN-8L(3.3x3.3)
Logic-Level
XNRUSEMI
Vds Max
100V
Id Max
30A
Rds(on)
15.6mΩ@10V
Vgs(th)
1.5V
Quick Reference
The XRS30N10D is an N-Channel MOSFET in a PDFN-8L(3.3x3.3) package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 30A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | XNRUSEMI | Original Manufacturer |
| Package | PDFN-8L(3.3x3.3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 31W | Max thermal limit |
| On-Resistance (Rds(on)) | 15.6mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 13nC@50V | Switching energy |
| Input Capacitance (Ciss) | 806pF | Internal gate capacitance |
| Output Capacitance (Coss) | 278pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |