XRS30J03D MOSFET Datasheet & Specifications

N-Channel DFN-8L(3x3) Logic-Level XNRUSEMI
Vds Max
30V
Id Max
30A;40A
Rds(on)
5.5mΩ@10V;4mΩ@10V
Vgs(th)
1.6V

Quick Reference

The XRS30J03D is an N-Channel MOSFET in a DFN-8L(3x3) package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 30A;40A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerXNRUSEMIOriginal Manufacturer
PackageDFN-8L(3x3)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)30A;40AMax current handling
Power Dissipation (Pd)30.5W;31.25WMax thermal limit
On-Resistance (Rds(on))5.5mΩ@10V;4mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.6VVoltage required to turn on
Gate Charge (Qg)10.3nC@10V;16nC@10VSwitching energy
Input Capacitance (Ciss)625pF;905pFInternal gate capacitance
Output Capacitance (Coss)240pF;475pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
AON7264E(XBLW) N-Channel DFN-8L(3x3) 60V 40A 12mΩ@10V 1.6V
XBLW