XR65P02D MOSFET Datasheet & Specifications
P-Channel
PDFN-8L(3.3x3.3)
Logic-Level
XNRUSEMI
Vds Max
20V
Id Max
65A
Rds(on)
4.5mΩ@4.5V
Vgs(th)
700mV
Quick Reference
The XR65P02D is an P-Channel MOSFET in a PDFN-8L(3.3x3.3) package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 65A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | XNRUSEMI | Original Manufacturer |
| Package | PDFN-8L(3.3x3.3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 65A | Max current handling |
| Power Dissipation (Pd) | 41.6W | Max thermal limit |
| On-Resistance (Rds(on)) | 4.5mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 700mV | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 6.199nF | Internal gate capacitance |
| Output Capacitance (Coss) | 885.6pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||