XR30G15D MOSFET Datasheet & Specifications

P-Channel PDFN3333-8L Logic-Level XNRUSEMI
Vds Max
30V
Id Max
15A
Rds(on)
16mΩ@10V;33mΩ@10V
Vgs(th)
1.5V

Quick Reference

The XR30G15D is an P-Channel MOSFET in a PDFN3333-8L package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 15A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerXNRUSEMIOriginal Manufacturer
PackagePDFN3333-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)15AMax current handling
Power Dissipation (Pd)2.5WMax thermal limit
On-Resistance (Rds(on))16mΩ@10V;33mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)7.2nC@4.5V;6.8nC@10VSwitching energy
Input Capacitance (Ciss)370pF;530pFInternal gate capacitance
Output Capacitance (Coss)54pF;70pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.