XR302 MOSFET Datasheet & Specifications

N-Channel PDFN3333-8L Logic-Level XNRUSEMI
Vds Max
30V
Id Max
30A
Rds(on)
14mΩ@10V
Vgs(th)
2.5V

Quick Reference

The XR302 is an N-Channel MOSFET in a PDFN3333-8L package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 30A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerXNRUSEMIOriginal Manufacturer
PackagePDFN3333-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)30AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
On-Resistance (Rds(on))14mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)16nCSwitching energy
Input Capacitance (Ciss)614pFInternal gate capacitance
Output Capacitance (Coss)118pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
XR120N03D N-Channel PDFN3333-8L 30V 120A 3.1mΩ@10V 2.2V
XNRUSEMI 📄 PDF
WNM3057-8/TR N-Channel PDFN3333-8L 30V 75A 4mΩ@10V 2.5V
WILLSEMI 📄 PDF
XR100N03D N-Channel PDFN3333-8L 30V 100A 4.7mΩ@10V 2.5V
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XR60N03D N-Channel PDFN3333-8L 30V 60A 6mΩ@10V 2.5V
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