XR20P06F MOSFET Datasheet & Specifications
P-Channel
PDFN5060-8L
Logic-Level
XNRUSEMI
Vds Max
60V
Id Max
20A
Rds(on)
60mΩ@10V
Vgs(th)
2.5V
Quick Reference
The XR20P06F is an P-Channel MOSFET in a PDFN5060-8L package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 20A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | XNRUSEMI | Original Manufacturer |
| Package | PDFN5060-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | 25W | Max thermal limit |
| On-Resistance (Rds(on)) | 60mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 6.1nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 585pF | Internal gate capacitance |
| Output Capacitance (Coss) | 100pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| XR30P06F | P-Channel | PDFN5060-8L | 60V | 30A | 24mΩ@10V | 1.8V | XNRUSEMI 📄 PDF |
| XR60G20F | P-Channel | PDFN5060-8L | 60V | 20A | 31mΩ@10V | 2.5V | XNRUSEMI 📄 PDF |
| XR60G25F | P-Channel | PDFN5060-8L | 60V | 25A | 46mΩ@10V | 2.5V | XNRUSEMI 📄 PDF |
| YJG25GP10A | P-Channel | PDFN5060-8L | 100V | 25A | 38mΩ@10V 43mΩ@4.5V |
1.8V | YANGJIE 📄 PDF |