WSD30L60DN56 MOSFET Datasheet & Specifications
P-Channel
PDFN-8(5x6)
Logic-Level
Winsok Semicon
Vds Max
30V
Id Max
45A
Rds(on)
21mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The WSD30L60DN56 is an P-Channel MOSFET in a PDFN-8(5x6) package, manufactured by Winsok Semicon. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 45A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Winsok Semicon | Original Manufacturer |
| Package | PDFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 45A | Max current handling |
| Power Dissipation (Pd) | 31W | Max thermal limit |
| On-Resistance (Rds(on)) | 21mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 31nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.55nF | Internal gate capacitance |
| Output Capacitance (Coss) | 315pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TW110P03EF | P-Channel | PDFN-8(5x6) | 30V | 110A | 3.1mΩ@10V | 2.5V | TWGMC 📄 PDF |